The model exploits the inherent symmetry of the device by referring all the voltages to the local substrate. The same approach is used to derive all the equations of the model: the weak and strong inversion asymptotes are first derived, then the variables of interest are normalized and linked using an appropriate interpolation function. All the large- and small-signal variables, namely the currents, the transconductances, the intrinsic capacitances, the non-quasi-static transadmittances and the thermal noise are continuous in all regions of operation, including weak inversion, moderate inversion, strong inversion, conduction and saturation. A fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented.
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